(a) Optical micrograph of the sample processed by FIB, (b) SEM micrograph of the electrical connections to the bismuth nanowire, and (c) magnified SEM micrograph of the FIB processed area. Figure 4 Current–voltage characteristics for various electrode pairs on the 521-nm-diameter bismuth nanowire measured at various temperatures. (a) 300, (b) 250, (c) 200, (d)

150, (e) 100, CYT387 (f) 50, and (g) 4.2 K. (h) Temperature dependence of the electrical resistance evaluated from the I-V curves. The inset of (h) shows the fabricated sample used for the measurement. Results and discussion Current–voltage characteristics Figure 4a,b,c,d,e,f,g shows current–voltage (I-V) characteristics for various combinations of electrodes on the bismuth nanowire measured at 300, 250, 200, 150, 100, 50, and 4.2 K. The measurement was performed with a direct current (DC) from −20 to +20 nA. The electrodes labeled as B and 3 were broken during a decrease in the temperature. The I-V characteristics of all the electrodes are clearly linear over the entire temperature range examined, which indicates that the electrodes fabricated by FIB were ohmic contacts. The resistance values agreed well for pair combinations of A-1 and A-2, A-5 and A-6 because the distances between the electrodes were

the same. Figure 4h shows the temperature dependence of the electrical resistance evaluated from these I-V characteristics. The resistance increased in the order of A-1, A-2 < A-4 < A-5, A-6 at 300 K depending on the distance between electrodes. However, the resistance of A-4 became larger than that of A-5 Saracatinib nmr and A-6 at less than 100 K. Tideglusib The increase in the resistance of A-4 with decreasing temperature may be due to the long length of the carbon electrode on the nanowire, although it did not significantly

influence the four-wire method. Resistivity measurement of 521-nm-diameter nanowire The temperature dependence of the resistivity was measured from 4.2 to 300 K at 10 nA, and the two-wire and four-wire resistance measurements were compared. Figure 5a shows the temperature dependence of the electrical resistivity for the bismuth nanowire measured by the AC Stattic purchase method with various pairs of electrodes. The resistance measured by the two-wire method before FIB processing, by the two-wire method with various pairs of electrodes fabricated by FIB, by the four-wire method with fabricated electrodes, and that for bulk bismuth are also shown in the figure. The temperature dependence of the bismuth nanowire was different from that of bulk bismuth, especially in the low temperature range, which was caused by the limitation on the carrier mean free path, as reported previously [15, 22]. The results showed that the resistivity from the two-wire method before FIB processing was close to that from the four-wire method at 300 K; however, the difference became more apparent with decreasing temperature.