Results indicate that the best films were made by using thermoplasticized zein characterized with a pronounced strain hardening AG-881 and a large content of alpha-helices. (C) 2009 Wiley Periodicals, Inc. J Appl Polym Sci 115: 277-287, 2010″
“Background: The eel parasitic nematodes Anguillicola crassus (originating from Asia) and Anguillicola novaezelandiae (originating from New Zealand) were both introduced to Europe, but occurred in sympatry only in Lake Bracciano in Italy, where they both infected the European eel (Anguilla anguilla). A. novaezelandiae was introduced to the lake in 1975 and
disappeared soon after A. crassus was also found there in 1993. We tested the hypothesis if hybridization of the two species might be an explanation
for the findings at Lake Bracciano.\n\nFindings: After laboratory infection of one European eel with 10 third stage larvae of each parasite, two living female and 4 male adults of each species were found to co-occur in the swim bladder after 222 days post exposure. In 9 out of 17 eggs, isolated in total from uteri of the two A. novaezelandiae females, alleles were detected by microsatellite analysis that are characteristic for A. crassus, suggesting the hybrid origin of these eggs. In contrast, none of the eggs isolated from A. crassus females possessed alleles different from those found in A. crassus adults, but it was revealed that one female can be inseminated buy NU7441 by several males.\n\nConclusion: Our results show that A. crassus and A. novaezelandiae can co-infect a single eel and can mature together in the same swim bladder. We also provide evidence for the possibility of hybridization of A. crassus males with A. novaezelandiae females. Therefore, hybridization might be an explanation for the disappearance of A. novaezelandiae from Lake Bracciano.”
“We have investigated the growth
of GaN nanostructures on three different Si substrates [ Si(001) covered with native oxides, Si(001)(2 x 1), and Si(111)(7 x 7)] under N-rich conditions by using plasma-assisted molecular beam epitaxy (PA-MBE). For Si native oxides, hexagonal GaN (h-GaN) nanorods with AICAR a c-axis fiber texture are formed, i. e., the c-axis is aligned along the substrate normal without any preferential in-plane orientations. For the clean Si(001)(2 x 1) substrates, c-axis-orientated nanorods are also grown with the epitaxial relationship of smaller than 11 (2) over bar0 bigger than (h-GaN) parallel to smaller than 110 bigger than (Si) or smaller than 12 (3) over bar0 bigger than (h-GaN) parallel to smaller than 110 bigger than (Si). On the other hand, mesh-like structures of h-GaN are formed on the clean Si(111)(7 x 7) substrates with the epitaxial relationship of 0001(h-GaN) parallel to 111(Si) and smaller than 11 (2) over bar0 bigger than (h-GaN) parallel to smaller than 110 bigger than (Si).