0 ± 0.2 and 3.0 ± 0.2 nm, respectively, while the double linear rows are equal to 2.5 ± 0.2 nm, close to the widths of the upper and lower terraces of the Si(110)-16 × 2 reconstruction (i.e., 2.2 ± 0.2 nm). The heights of the left and right zigzag chains are 70 ± 10 and 170 ± 10 pm, respectively,
whereas the heights of the left and right linear rows are 90 ± 10 and 120 ± 10 pm, respectively. The right chain height of 6-NW is much lower than the height of 3-NW, indicating that there could be an inward vertical relaxation of Ce atoms upon additional Ce adsorption, Idasanutlin ic50 but the left chain height of 6-NW is slightly smaller than the height of the pristine lower Si terraces, suggesting that the left chain originates from the epitaxial growth of CeSi x on the lower terrace and also may contain an inward vertical relaxation. SAHA nmr In Figure 4e, the topographic maxima of the double zigzag chains in the empty-state image and the double linear rows in the filled-state image are
localized in the same Sapanisertib chemical structure spatial area (i.e., the right chains/rows). The spatial coincidence of the empty and filled states indicates that the 6-NWs may exhibit a covalent character. The results of Figure 4 strongly suggest that Ce atoms nucleated concurrently along the upper and lower terraces of the Si(110) surface to form CeSi x NWs consisting of double chain rows with different apparent heights. 9-ML Ce deposition Figure 5a,b,c shows various magnified STM topographic images of the parallel CeSi x NW array obtained by depositing 9-ML Ce on the Si(110) surface, which are labeled as 9-NWs. As shown in Figure 5a,b, these 9-NWs are still straight and parallel-aligned along the [ ] direction, with their length exceeding 1 μm. However, the NW density is not high, which may be due to the insufficient Ce amount for this growth stage. Figure 5c,d clearly depicts that each 9-NW exhibits a bundle of two nonequivalent zigzag chains (indicated by two zigzag lines) with different widths/heights of 1.2 ± 0.2/0.28 ± 0.02 nm (left) and 2.2 ± 0.2/0.34 ± 0.02 Protirelin nm (right) at both sides and one linear row (marked by two parallel dashed lines) with
a width/height of 1.9 ± 0.2/0.28 ± 0.02 nm at the middle. The inset of Figure 5c displays the filled-state image of the 9-NW, which clearly shows the 9-NWs grown epitaxially on the Si(110) surface. The mean NW width is broadened to 5.3 ± 0.2 nm and the typical height is increased to 340 ± 20 pm. The average pitch is enlarged to 6.3 ± 0.2 nm, similar to that of the parallel 6-NWs (i.e., 6.0 ± 0.2 nm). Obviously, the left-right asymmetry observed in the topography of the 9-NW is similar to that of the 6-NW. Moreover, the total width of both the right zigzag chain and the linear row in the 9-NW (i.e., 4.1 ± 0.2 nm) is close to that of the double zigzag chains of the 6-NW (i.e., 5.0 ± 0.2 nm).